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| HCC/HCF4066B QUAD BILATERAL SWITCH FOR TRANSMISSION OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS .15V .80 .SWI .ON .HI .HI .EXTREMELY .EXTREMELYHI .LOWCROSSTALK .MATCHED .FREQUENCYRESPONSE,SWI .QUI .5V,10V,AND15VPARAMETRI .I .100%TESTEDFORQUI .MEETSALLREQUI DIGITAL OR 7.5V PEAK-TO-PEAK SWITCHING TYPICAL ON RESISTANCE FOR 15V OPERATION TCH ON RESISTANCE MATCHED TO WITHIN 5 OVER 15V SIGNAL-INPUT RANGE RESISTANCE FLAT OVER FULL PEAKTO-PEAK SIGNAL RANGE GH ON/OFF OUTPUT-VOLTAGE RATIO : 65dB TYP. @ fis = 10kHz, RL = 10k GH DEGREE OF LINEARITY : < 0.5% DISTORTION TYP. @ fis = 1kHz, Vis = 5 Vp-p, VDD - VSS 10V, RL = 10k LOW OFF SWITCH LEAKAGE RESULTING IN VERY LOW OFFSET CURRENT AND HIGH EFFECTIVE OFF RESISTANCE ; 10pA TYP. @ VDD - VSS = 10V, TA = 25C GH CONTROL INPUT IMPEDANCE (control circuit isolated from signal circuit) : 1012 TYP. BETWEEN SWITCHES : - 50dB TYP. @ fis = 0.9MHz, R L = 1k CONTROL-INPUT TO SIGNALOUTPUT CAPACITANCE : REDUCES OUTPUT SIGNAL TRANSIENTS TCH ON = 40MHz (typ.) ESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE C RATINGS NPUT CURRENT OF 100nA AT 18V AND 25C FOR HCC DEVICE ESCENT CURRENT REMENTS OF JEDEC TENTATIVE STANDARD No. 13A, "STANDARD SPECIFICATIONS FOR DESCRIPTION OF "B" SERIES CMOS DEVICES" EY (Plastic Package) F (Ceramic Frit Seal Package) M1 (Micro Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC4066BF HCF4066BM1 HCF4066BEY HCF4066BC1 PIN CONNECTIONS DESCRIPTION The HCC4066B (extended temperature range) and HCF4066B (intermediate temperature range) are monolithic integrated circuits, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4066B is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-forJune 1989 1/11 HCC/HCF4066B pin compatible with HCC/HCF4016B, but exhibits a much lower ON resistance. In addition, the ON resistance is relatively constant over the full input-signal range. The HCC/HCF4066B consists of four independent bilateral switches. A single control signal is required per switch. Both the p and the n device in a given switch are biased ON or OFF simultaneously by the control signal. As shown in schematic diagram, the well of the n-channel device on each switch is either tied to the input when the switch is ON or to VSS when the switch is OFF. This SCHEMATIC DIAGRAM 1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY. configuration eliminates the variation of the switchtransistor threshold voltage with input signal, and thus keeps the ON resistance low over the full operating-signal range. The advantages over singlechannel switches include peak input signal voltage swings equal to the full supply voltage, and more constant ON impedance over the input-signal range. For sample-and-hold applications, however, the HCC/HCF4016B is recommended. ABSOLUTE MAXIMUM RATINGS Symbol V DD* Vi II Pt ot Parameter Supply Voltage : HC C Types H C F Types Input Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for T o p = Full Package-temperature Range Operating Temperature : HCC Types H CF Types Storage Temperature Value - 0.5 to + 20 - 0.5 to + 18 - 0.5 to V DD + 0.5 10 200 100 - 55 to + 125 - 40 to + 85 - 65 to + 150 Unit V V V mA mW mW C C C Top Tstg Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. 2/11 HCC/HCF4066B RECOMMENDED OPERATING CONDITIONS Symbol V DD VI Top Parameter Supply Voltage : HC C Types H C F Types Input Voltage Operating Temperature : H CC Types H C F Types Value 3 to 18 3 to 15 0 to V DD - 55 to + 125 - 40 to + 85 Unit V V V C C ELECTRICAL CHARACTERISTICS (Tamb = 25C, typical temperature coefficient for all VDD values is 0,3%/C) Test Conditions Symbol IL Parameter Quiescent Device Current (all HCC Types switches ON or all switches OFF) HCF Types VI (V) 0/ 5 0/10 0/15 0/20 0/ 5 0/10 0/15 SIGNAL INPUTS (V is) and Outputs (V os ) RON On Resistance HCC Types VC = V DD RL = 10K Return VDD - V SS to ________ 2 Vis = V SS to V DD 5 10 15 5 10 15 ON Resistance between any 2 Switches, RON Total Harmonic Distorsion RL 10k, VC = V DD 5 10 15 TDH VC = VDD = 5V, VSS = - 5V, Vis (p-p) = 5V (sine wave centered in 0V) RL = 10k, fis = 1kHz sine wave VC = V DD = 5V, VSS = - 5V, Vis (p-p) = 5V (sine wave centured on 0V) RL = 1k 800 310 200 850 330 210 470 180 125 470 180 125 15 10 5 1050 400 240 1050 400 240 1300 550 320 1200 500 300 V DD (V) 5 10 15 20 5 10 15 T Lo w* Min. Max. Min. 0.25 0.5 1 5 1 2 4 Value 25 C 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.25 0.5 1 5 1 2 4 T High* Max. 7.5 15 30 150 7.5 15 30 A Unit Typ. Max. Min. HCF Types 0.4 % - 3 dB Cutoff Frequency (switch on) 40 MHz * TLow = - 55C for HCC device : - 40C for HCF device. * THigh = + 125C for HCC device : + 85C for HCF device. The Noise Margin for both "1" and "0" level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. 3/11 HCC/HCF4066B ELECTRICAL CHARACTERISTICS (continued) Test Conditions Symbol Parameter - 50 dB Feedthrough Frequency(switch off) - 50 dB Crosstalk Frequency V DD (V) VC = V SS = - 5 V, Vis (p-p) = 5V (sine wave centured on 0V) RL = 1 k VC ( A) = VDD = + 5 V VC ( B) = VSS = - 5 V Vis (A) = 5Vp-p, 50 source RL = 1 k 5 10 15 TLow* Min. Max. Min. Va lu e 2 5C Typ. THigh* Max. Min. Max. Unit 1 MHz 8 MHz tpd Propagati on Delay RL = 200k (signal input to VC = V DD, VSS = GND, CL = 5 0pF , V is = 1 0V signal output) (squa re wave centured on 5V) tr, tf = 20ns Input Capacitance VDD = + 5 V VC = V SS = - 5 V Output Capacitance Feedthrough Input/Output Leakage Current Switch OFF VC = 0V HCC Vis = 1 8 V ; V os Types = 0V Vis = 0 V ; V os = 18V VC = 0V HCF V = 1 5 V ; V os Types = is 0V Vis = 0 V ; V os = 15V 18 20 10 7 8 40 20 15 ns Cis Cos Cios pF 8 0.5 0.1 10 -3 0.1 1 A 15 0.3 10 -3 0.3 1 CONTROL (V C) VILC Control Input Low Iis < 1 0A Voltage Vis = V SS, Vos = V DD and Vis = V DD, Vos = V SS Control Input High Voltage 5 10 15 5 10 15 IIH, IIL Input Leakage Current HCC Vis V DD Types VDD - V SS = 1 8 V HCF VDD - V SS = 1 5 V Types VCC V DD - V SS 18 15 3.5 7 11 0.1 0.3 1 2 2 3.5 7 11 10 -5 0.1 10 -5 0.3 1 2 2 3.5 7 11 1 1 A V 1 2 2 V VIHC * TLow = - 55C for HCC device : - 40C for HCF device. * THigh = + 125C for HCC device : + 85C for HCF device. The Noise Margin for both "1" and "0" level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. 4/11 HCC/HCF4066B ELECTRICAL CHARACTERISTICS (continued) Test Conditions Symbol Parameter Crosstalk (control input to signal output) VC = 10V (sq. wave) tr, tf = 20ns RL = 10k V DD (V) 10 5 10 15 5 T Lo w* Min. Max. Min. Val ue 25 C T High* Unit Typ. Max. Min. Max. 50 35 20 15 6 MHz 70 40 30 ns mV Turn-on VIN = V DD Propagation Delay tr, tf = 20ns CL = 50pF RL = 1k Control Input Repetition Rate Vis = VDD,VSS = GND RL = 1k to gnd CL = 50pF VC = 10V (square wave centured on 5V) tr, tf = 20ns Vos = 1/2V os @ 1kHz 10 15 9 9.5 5 7.5 CI Input Capacitance Any Input pF * TLo w = - 55C for HCC device : - 40C for HCF device. * THigh = + 125C for HCC device : + 85C for HCF device. The Noise Margin for both "1" and "0" level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. TYPICAL APPLICATIONS BIDIRECTIONAL SIGNAL TRANSMISSION VIA DIGITAL CONTROL LOGIC 5/11 HCC/HCF4066B TYPICAL APPLICATIONS (continued) 4-CHANNEL PAM MULTIPLEX SYSTEM DIAGRAM. 6/11 HCC/HCF4066B Plastic DIP14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 7/11 HCC/HCF4066B Ceramic DIP14/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053C 8/11 HCC/HCF4066B SO14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 9/11 HCC/HCF4066B PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 10/11 HCC/HCF4066B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11 |
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